Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter

نویسندگان

چکیده

Radiation Sensitive MOSFETs (RADFETs) have been commonly used as ionizing radiation dosimeters. The threshold voltage variation is the main transistor parameter for dosimetry, this directly related to total dose and it can be easily determined by using simple measurement biasing circuits. In work presented a novel experimental method determine optimal drain-source current value supplied p-type MOSFET in traditional RADFET configuration (diode connected transistor) monitoring of accumulated X- gamma-radiation dose. Experimental results from irradiations with 60Co gamma-rays comparison measurements semiconductor analyzer indicate that lower supply values result more precise results.

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ژورنال

عنوان ژورنال: Brazilian Journal of Radiation Sciences

سال: 2023

ISSN: ['2319-0612']

DOI: https://doi.org/10.15392/2319-0612.2023.2117